Equipment for manufacturing a semiconductor device using a solid

Coating apparatus – Gas or vapor deposition – Crucible or evaporator structure

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C23C 1400

Patent

active

056627424

ABSTRACT:
In an Si-MBE equipment, a vapor deposition equipment or the like, electrodes for measuring solid source resistance are disposed on both sides of the solid source, thereby being capable of monitoring the source resistance from the exterior of the equipment using those electrodes. In this situation, the resistance corresponding to the limit of the amount of its use is found in advance, thereby knowing timing of exchanging the solid source and also of previously preventing the hearth from being damaged due to unexchange of the source.

REFERENCES:
patent: 4548670 (1985-10-01), Pinkhasov
patent: 5041302 (1991-08-01), Koide
G. Peter et al., "A new electron beam evaporation source for Si molecular beam epitaxy controlled by a quadrupole mass spectrometer", Journal of Vacuum Science & Technology, Nov./Dec. 1991, vol. 9, No. 6, New York, pp. 3061-3063.
"Pb/Sn Thickiness Monitor", IBM Technical Disclosure Bulletin, Mar. 1985, vol. 27, No. 10A, pp. 5542-5543.

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