Equipment for cleaning, etching and drying semiconductor wafer a

Cleaning and liquid contact with solids – Apparatus – With plural means for supplying or applying different fluids...

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134 2, 134 3, 134 26, 134 30, 134 31, 134 37, 134 45, 1341001, 1341021, 134176, 134179, 134902, B08B 300, B08B 500, B08B 704

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058968750

ABSTRACT:
An equipment for cleaning, etching and drying a semiconductor wafer is provided with a process chamber having a closed space of which temperature is capable of being heated and adjusted by a heater; a mesh arranged at the center part in the process chamber and supporting at least one semiconductor wafer to be cleaned; a plurality of spray nozzles arranged in line at the upper part in the process chamber; and a rotary discharge nozzle arranged at the lower part in the process chamber. The spray nozzles spray chemical and ultrapure water with nitrogen gas in mist state, and the rotary discharge nozzle blows out chemical and ultrapure water as jet stream by rotation of a first arm and second arms thereof.

REFERENCES:
patent: 4982753 (1991-01-01), Grebinski, Jr. et al.
patent: 5186192 (1993-02-01), Netsu et al.
H. Kawahara, et al., "Removal of Particles on Si Wafers in SC-1 Solution", IEICE Transactions on Elelctronics, vol. E77-C, No. 3, pp. 492-497 (Mar. 1994).
W. Kern, et al., "Cleaning Solutions Based on Hydrogen Peroxide for use in Silicon Semiconductor Technology", RCA Review, pp. 187-206 (Jun. 1970).
W. Kern, "Radiochemical Study of Semiconductor Surface Contamination", RCA Review, pp. 207-233 (Jun. 1970).

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