Equipment and method for annealing semiconductors

Details Equipment and method for annealing semiconductors Equipment and method for annealing semiconductors

1980-12-31

1983-08-09

Anderson, Bruce C.

Radiant energy

Irradiation of objects or material

219121LA, H01L 2126

Patent

active

043980945

ABSTRACT:
A semiconductor is annealed by an equipment which comprises a short-arc type rare gas discharge lamp as a heat source possessing the condition, 140.gtoreq.P.times.l.gtoreq.16, where l (mm) is the distance between an anode and a cathode and P is the sealed gas pressure (atmospheric pressure) at room temperature (25.degree. C.), an optical system for converging emitted light from the gas discharge lamp in the required manner, a power source unit capable of controlling the emitted light of the gas discharge lamp, and a stage for mounting the semiconductor. With this equipment, the semiconductor crystal is satisfactorily restored from damages incidental to ion implantation and a polycrystalline or amorphous semiconductor is converted into a good single crystal semiconductor.

REFERENCES:
patent: 3611191 (1971-10-01), Altman
patent: 4151008 (1979-04-01), Kirkpatrick
patent: 4298005 (1981-11-01), Mutzhas

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