Equalized biased array for PROMS and EPROMS

Static information storage and retrieval – Powering

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365104, G11C 700

Patent

active

047220759

ABSTRACT:
An array of transistor memory cells of a type in which each cell has a transistor, a ground select switch and a sense amplifier coupling switch. A bias voltage line on which there is established a voltage V.sub.BIAS is coupled to each bit line by a bit line transistor whose gate during a read mode is at least about a voltage V.sub.T above V.sub.BIAS. Similarly, the source of each transistor is coupled to the bias voltage line by a source line transistor whose gate is more than about a voltage V.sub.T about V.sub.BIAS. The foregoing arrangement ensures that for every non-selected transistor that transistor's source voltage will be equal to its drain voltage so that all non-selected transistors will be substantially non-conducting.

REFERENCES:
patent: 4301518 (1981-11-01), Klaas
patent: 4314362 (1982-02-01), Klaas et al.
patent: 4344154 (1982-08-01), Klaas et al.
patent: 4387447 (1983-06-01), Klaas et al.

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