EPROM with ultraviolet radiation transparent silicon nitride pas

Details EPROM with ultraviolet radiation transparent silicon nitride pas EPROM with ultraviolet radiation transparent silicon nitride pas

1985-02-01

1987-05-12

Carroll, J.

357 235, 357 52, H01L 2978, H01L 2906

Patent

active

046654267

ABSTRACT:
An erasable programmable read only memory (EPROM) integrated circuit device 2 having a topside passivation layer 9 of silicon nitride which is transparent to ultraviolet radiation is disclosed. The refractive index of the silicon nitride film is in the range of 1.93.+-.0.03.

REFERENCES:
patent: 3660819 (1972-08-01), Frohman-Bentchkowsky
patent: 4203158 (1980-08-01), Frohman-Bentchkowsky
patent: 4448400 (1984-08-01), Harari
patent: 4516313 (1985-08-01), Turi et al.
patent: 4532022 (1985-07-01), Takasaki et al.
T. E. Nagy et al., "Physical and electrical properties of plasma deposited silicon nitride films"m ECS Proceedings of the Symposium on Silicon Nitride thin Insulating Films, vol. 83-8 (1983) pp. 167-176.
M. J. Rand et al., "Optical absorption as a control test for plasma silicon nitride deposition", Journal of the Electrochemical Society, vol. 125 (1978) pp. 99-101.

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