Electricity: measuring and testing – Fault detecting in electric circuits and of electric components – Of individual circuit component or element
Patent
1998-05-11
2000-10-24
Nguyen, Vinh P.
Electricity: measuring and testing
Fault detecting in electric circuits and of electric components
Of individual circuit component or element
G01R 3102
Patent
active
06137301&
ABSTRACT:
In the present invention is described the use of an EPROM that is configred in a special way to monitor in situ the applied voltage to semiconductor product in a bun-in test and capture the maximum value of the applied voltage during the test. This technique operates off the threshold shift mechanism in which gate bias induces electrons at the substrate surface which are accelerated by the drain and trapped in the polysilcon gate after the electrons overcome the gate oxide energy barrier. This puts an extra bias on the gate making a threshold voltage shift. The measurement of the threshold voltage shift for a particular period of time will be proportional to the value of the applied voltage. The trapped electrons can be released back to the substrate by use of ultra violet light since the electrons gain energy from the UV light to overcome the gate oxide energy barrier.
REFERENCES:
patent: 4799021 (1989-01-01), Cozzi
patent: 4900948 (1990-02-01), Hamilton
patent: 5452253 (1995-09-01), Choi
patent: 5561639 (1996-10-01), Lee et al.
patent: 5656944 (1997-08-01), Choi
patent: 5923098 (1999-07-01), Olson
Ackerman Stephen B.
Nguyen Vinh P.
Saile George O.
Vanguard International Semiconductor Company
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