Eprom memory cell with two symmetrical half-cells and separate f

Details Eprom memory cell with two symmetrical half-cells and separate f Eprom memory cell with two symmetrical half-cells and separate f

1988-03-14

1990-01-23

Hecker, Stuart N.

Static information storage and retrieval

Floating gate

Particular biasing

365200, 357 235, G11C 700, G11C 1140

Patent

active

048962953

ABSTRACT:
An EPROM memory cell including a source, a drain, a floating gate and a control gate with interposed dielectric oxide is made up of two symmetrical half-cells having the drain and the control gate in common, the sources physically separated but electrically connected with each other and the floating gates separated physically and electrically.

REFERENCES:
patent: 4355375 (1982-10-01), Arakawa
patent: 4639893 (1987-01-01), Eitan
patent: 4774202 (1988-09-01), Pan et al.
patent: 4792925 (1988-12-01), Corda et al.

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