Static information storage and retrieval – Floating gate – Particular biasing
Patent
1998-11-04
1999-11-09
Hoang, Huan
Static information storage and retrieval
Floating gate
Particular biasing
257314, G11C 1604
Patent
active
059826690
ABSTRACT:
An electrically-programmable read-only-memory (EPROM) and a flash memory cell provide both source-side and drain-side injection, along with a reduced cell size, by forming the memory cell in a trench. The drain is formed in the top surface of the substrate, the source is formed in the bottom surface of the trench, and the stacked gate is formed over the sidewall of the trench.
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Bergemont Albert
Kalnitsky Alexander
Pichler Christoph
Hoang Huan
National Semiconductor Corporation
Phung Anh
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