Epitazy of heterojunction devices

Details Epitazy of heterojunction devices Epitazy of heterojunction devices

1972-03-15

1976-07-06

Ozaki, G. T.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148172, 148 15, 148 33, 29576E, 252 623GA, H01L 738

Patent

active

039679870

ABSTRACT:
A method of producing light emitting diodes of high quantum efficiency in mass production by utilizing an epitaxial deposition from a small size melt such that the substrate itself serves as a saturation source. A silicon doped gallium arsenide wafer is cleaned and etched by normal means and subsequently the wafer is precoated with a properly doped gallium master melt. The coated wafers are inserted into an epitaxial furnace and the gallium master melt effects solution of a portion of the gallium arsenide monocrystal substrate and finally the entire wafer is cooled, maintaining a temperature gradient causing epitaxial growth on the substrate.

REFERENCES:
patent: 2813048 (1957-11-01), Pfann
patent: 3537029 (1970-10-01), Kressel et al.
patent: 3600240 (1971-08-01), Rupprecht et al.
patent: 3694275 (1972-09-01), Nelson

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