Superconductor technology: apparatus – material – process – High temperature devices – systems – apparatus – com- ponents,... – Superconductor layer and one semiconducting or silicon layer
Patent
1995-05-18
1997-01-14
Ryan, Patrick
Superconductor technology: apparatus, material, process
High temperature devices, systems, apparatus, com- ponents,...
Superconductor layer and one semiconducting or silicon layer
428688, 428930, 505237, 505238, 505701, B32B 900
Patent
active
055939511
ABSTRACT:
An epitaxial structure comprising a silicon containing substrate and a high T.sub.c copper-oxide-based superconducting layer, which may include an intermediate layer between the silicon substrate and the superconductor layer. Epitaxial deposition is accomplished by depositing a superconductor on a (001) surface of silicon in a manner in which the unit cell of the superconductor layer has two out of three of its crystallographic axes rotated 45 degrees with respect to the corresponding axes of the silicon unit cell, the remaining axis of the superconductor unit cell being normal to the Si (001) surface.
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Bennet, Concise Chem. & Tech Dictionary, 4th Ed, p. 59.
"Cuprate Superconductors", May 10, 1993, C&EN pp. 4-5.
Geballe, "Paths to Higher Temp Super" Science vol. 259, Mar. 12, 1993 pp. 1550-1551.
Engineer's Guide to High Temp. Super., by Doss Wiley & Sons 1989, pp. 274-277, 381-386.
"Superconductor's Material Problems," Science vol. 240, Apr. 1, 1988 pp. 25-27.
International Business Machines - Corporation
Jewik Patrick
Ryan Patrick
Trepp Robert M.
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