Epitaxially grown silicon layers with relatively long minority c

Details Epitaxially grown silicon layers with relatively long minority c Epitaxially grown silicon layers with relatively long minority c

1974-11-29

1981-01-27

Larkins, William D.

357 42, 357 49, 357 89, H01L 2712

Patent

active

042478596

ABSTRACT:
A semiconductor device such as a film or hybrid integrated circuit is provided having a relatively lightly doped, epitaxially grown silicon layer with a relatively long minority carrier lifetime. The lightly doped silicon layer of less than about 1.times.10.sup.17 per cm.sup.3 is grown on a heavily doped silicon layer of greater than about 1.times.10.sup.19 and preferably greater than about 1.times.10.sup.20 per cm.sup.3 formed with phosphorus or boron impurity. The heavily doped silicon layer is preferably formed, either in a semiconductor body or an epitaxial layer on an insulator substrate, preferably by diffusing the impurity into the body or epitaxial layer. Preferably, the semiconductor device is a thin-film device and most desirably a silicon-on-sapphire device.

REFERENCES:
patent: 3237062 (1966-02-01), Murphy
patent: 3418181 (1968-12-01), Robinson
Heiman et al., Solid-State Electronics, vol. 11, 1968, pp. 411-418. _
Allison et al., Proc. IEEE, vol. 57, No. 9, Sep. 1969, pp. 1490-1498. _

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