Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1980-11-03
1982-11-09
Rutledge, L. Dewayne
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
29571, 29590, 148 15, 357 59, 427 86, H01L 21205, H01L 21324
Patent
active
043583261
ABSTRACT:
Disclosed is a process for reducing microcracks and microvoids in the formation of polycrystalline (polysilicon) structures from initial layers of amorphous silicon by annealing. In annealing of amorphous silicon to the polycrystalline form, the crystal grains are thickness limited; and thus by maintaining the thickness below 1000 angstroms, the spacing between contrasting material forming the crystal grains can be minimized on anneal. The resultant equiaxial grains are used as seed crystals for epi-like growth of silicon from them into the required or desired layer thickness.
REFERENCES:
patent: 3370980 (1968-02-01), Anderson
patent: 3479237 (1969-11-01), Bergh et al.
patent: 3519901 (1970-07-01), Bean et al.
patent: 3533857 (1970-10-01), Mayer et al.
patent: 3558374 (1971-01-01), Boss et al.
patent: 3586542 (1971-06-01), Mac Rae
patent: 3589949 (1971-06-01), Nelson
patent: 3730765 (1973-05-01), Stein
patent: 3736192 (1973-05-01), Tokuyama et al.
patent: 3811076 (1974-05-01), Smith, Jr.
patent: 3841926 (1974-10-01), Garnache et al.
patent: 3900345 (1975-08-01), Lesk
patent: 4087571 (1978-05-01), Kamins et al.
patent: 4123300 (1978-10-01), Joshi et al.
patent: 4249968 (1981-02-01), Gardiner et al.
patent: 4270960 (1981-06-01), Bollen et al.
IBM-TDB, "Improving the Electrical Characteristics of Ion Implantation", vol. 12, No. 10, Mar. 1970, p. 1576, J. F. Ziegler.
IBM TDB "Epitaxial Garnet Films from Organo Metallic Sources", vol. 15, No. 2, Jul. 1972, V. Sadagopan et al.
IBM TDB, "FET Integrated Circuit having Two Polysilicon Layers", vol. 15, No. 10, Mar. 1973, pp. 3022-3023, S. A. Abbas.
"Thermal Oxidation of Phosphorus-Doped Polycrystalline Silicon in Wet Oxygen", H. Sunami, J. Electrochem. Soc: Solid State Science and Technology, Jun. 1978, vol. 125, No. 6, pp. 892-897.
"Grain Growth Mechanism of Heavily Phosphorus-Implanted Polycrystalline Silicon", Y. Wada et al., J. Electrochem. Soc: Solid State Science and Technology, Sep. 1978, vol. 125, No. 9, pp. 1499-1504.
IBM TDB, "Reduction of Leakage in SiO.sub.2 Grown on Silicon Films", vol. 18, No. 5, Oct. 1975, p. 1615, A. B. Fowler.
IBM TDB, "Method to Avoid the Polysilicon Film Tearing Mechanism", vol. 20, No. 11B, Apr. 1978, p. 4961, E. A. Irene.
IBM TDB, "Double Polysilicon Dynamic Memory Cell with Polysilicon Bit Line", vol. 21, No. 9, Feb. 1979, pp. 3828-3831, V. L. Rideout.
Emmanuel et al., "Growth of Polycrystalline Silicon Films . . . ", J. Electrochem. Soc., vol. 120, No. 11, Nov. 1973, pp. 1586-1591.
Jadus et al., "Simultaneous Polycrystalline . . . Growth", I.B.M. Tech. Discl. Bull., vol. 14, No. 7, Dec. 1971, p. 2100.
Chaudhari et al., "Growing Crack-Free Single-Crystal Films", I.B.M. Tech. Discl. Bull., vol. 15, No. 9, Feb. 1973, p. 2700.
International Business Machines - Corporation
Powers Henry
Rutledge L. Dewayne
Saba W. G.
LandOfFree
Epitaxially extended polycrystalline structures utilizing a pred does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Epitaxially extended polycrystalline structures utilizing a pred, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Epitaxially extended polycrystalline structures utilizing a pred will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-744774