Epitaxial Wurtzite growth structure for semiconductor light-emit

Details Epitaxial Wurtzite growth structure for semiconductor light-emit Epitaxial Wurtzite growth structure for semiconductor light-emit

1990-02-12

1991-04-09

Mintel, William

357 60, 357 61, H01L 3300

Patent

active

050069080

ABSTRACT:
An epitaxial growth structure for a semiconductor light-emitting device includes a sapphire substrate having a (0110) face (substantially M face), and a wurtzite type Group III nitride mixed crystal semiconductor single crystal film epitaxially grown on the substrate. A semiconductor light-emitting device includes a sapphire substrate having a (0110) face (substantially M face), a wurtzite type Group III nitride mixed crystal semiconductor single crystal film epitaxially grown on the substrate, an insulating film formed on the single crystal film, and a metal electrode formed on the insulating film.

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patent: 4616248 (1986-10-01), Khan et al.
Boulou et al., "Light-Emitting Diodes Based on GaN," Philips Tech., Rev., 37, 1977, No. 9/10, pp. 237-240.

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