Epitaxial wafer of compound semiconductor display device

Details Epitaxial wafer of compound semiconductor display device Epitaxial wafer of compound semiconductor display device

1984-02-10

1985-04-09

Larkins, William D.

Coherent light generators

Particular component circuitry

Optical pumping

357 16, 357 61, 372 45, H01L 29161, H01L 29205, H01L 3300

Patent

active

045105154

ABSTRACT:
An epitaxial wafer of a compound semiconductor comprising a single crystalline semiconductor substrate consisting of GaP and an active layer consisting of GaAs.sub.1-x P.sub.x, having a mixed crystal ratio (x) in the range of from 0.5 to 1 is used for an LED. According to the present invention, between the single crystalline semiconductor substrate and the active layer, a light-absorbing layer consisting of GaAs.sub.1-x P.sub.x having the mixed crystal ratio (x) smaller than that of the active layer, is formed to suppress the reflection of light from the surface of the substrate.

REFERENCES:
patent: 3813587 (1974-03-01), Umeda et al.
patent: 3873382 (1975-03-01), Groves et al.
patent: 4359774 (1982-11-01), Olsen et al.
patent: 4378259 (1983-03-01), Hasegawa et al.
D. K. Wickenden, "High-Resolution LED Displays for Avionic Applications", GEC Journal of Science & Technology, vol. 46, (1980), pp. 91-95.

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