Epitaxial wafer for semiconductor light-emitting devices,...

Details Epitaxial wafer for semiconductor light-emitting devices,... Epitaxial wafer for semiconductor light-emitting devices,...

2005-04-14

2008-11-11

Weiss, Howard (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

In combination with or also constituting light responsive...

C257S099000, C257SE33001

Reexamination Certificate

active

07449720

ABSTRACT:
An epitaxial wafer for semiconductor light-emitting devices has an n-type substrate, on which are sequentially formed an n-type cladding layer, an active layer, a p-type cladding layer having Mg as a p-type dopant, and a p-type cap layer. The p-type cap layer has at least two Mg-doped and Zn-doped layers that are formed sequentially from the substrate side.

REFERENCES:
patent: 6487226 (2002-11-01), Iwamoto et al.
patent: 6834068 (2004-12-01), Onishi
patent: 9-69667 (1997-03-01), None
patent: 9-298343 (1997-11-01), None
patent: 2002-111052 (2002-04-01), None

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