Epitaxial wafer for GaP pure green light-emitting diode and GaP

Details Epitaxial wafer for GaP pure green light-emitting diode and GaP Epitaxial wafer for GaP pure green light-emitting diode and GaP

1997-11-06

1999-03-23

Tran, Mihn Loan

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

Active layer of indirect band gap semiconductor

257 87, 257101, 257102, 257103, H01L 2715

Patent

active

058863699

ABSTRACT:
An epitaxial wafer for a GaP pure green light emitting diode includes an n-type single crystal GaP substrate formed in order thereon with a first n-type GaP epitaxial layer, a second n-type GaP epitaxial layer and a p-type GaP epitaxial layer. The p-type GaP epitaxial layer has a sulfur concentration of not greater than 1.times.10.sup.17 cm.sup.31 3, the second n-type GaP epitaxial layer has a carrier concentration on a side thereof interfacing with the p-type GaP epitaxial layer of 0.5-5.times.10.sup.17 cm.sup.-3, and the p-type GaP epitaxial layer has a carrier concentration on a side thereof interfacing with the second n-type GaP epitaxial layer that is 1-10.times.10.sup.17 cm.sup.-3 and is not less than twice the carrier concentration of the second n-type GaP epitaxial layer on the side thereof interfacing with the p-type GaP epitaxial layer. A GaP pure green light-emitting diode exhibiting high brightness includes the epitaxial wafer, an n-type electrode provided on a back surface of the single crystal substrate and a p-type electrode provided on the upper surface of the p-type GaP epitaxial layer.

REFERENCES:
patent: 4965644 (1990-10-01), Kawabata et al.

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