Epitaxial wafer for GaP light-emitting element and GaP light-emi

Details Epitaxial wafer for GaP light-emitting element and GaP light-emi Epitaxial wafer for GaP light-emitting element and GaP light-emi

1997-07-16

1998-09-22

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular semiconductor material

257101, 257102, 257 86, H01L 3300, H01L 310304

Patent

active

058118403

ABSTRACT:
An epitaxial wafer for a GaP light-emitting element comprising an n-type GaP buffer layer, n-type GaP layer, nitrogen-doped n-type GaP layer and p-type GaP layer grown sequentially on an n-type GaP single-crystal substrate, in which the sum concentration of Ti, V, Cr, Mn, Fe, Co, Ni, and Cu in the nitrogen-doped n-type GaP layer does not exceed 1.times.10.sup.15 cm.sup.-3, and the sum concentration of Ti, V, Cr, Mn, Fe, Co, Ni, and Cu in the buffer layer does not exceed 1.times.10.sup.16 cm.sup.-3. n-type and p-type electrodes are formed on the wafer which is then divided to form GaP light-emitting elements.

REFERENCES:
patent: 4821274 (1989-04-01), Naud
patent: 5300792 (1994-04-01), Yanagisawa
patent: 5302839 (1994-04-01), Kaise
patent: 5349208 (1994-09-01), Yanagisawa
B. Cleriaud; The Institute of Physics; J. Phys. C: Solid State Phys. 18, pp. 3615-3661; 1985.

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