Epitaxial wafer for a semiconductor light emitting device,...

Details Epitaxial wafer for a semiconductor light emitting device,... Epitaxial wafer for a semiconductor light emitting device,...

2006-08-18

2009-11-24

Wilczewski, M. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

C257S097000, C257S102000, C257S103000, C257S201000, C257S615000, C257SE33027, C257SE33029, C257SE33031, C257SE33032, C438S047000

Reexamination Certificate

active

07622745

ABSTRACT:
A n-type GaAs buffer layer2, a n-type GaInP buffer layer3, a n-type AlGaInP cladding layer4, an undoped AlGaAs guide layer5, an AlGaAs/GaAs multiquantum well (MQW) active layer6, a first p-type AlGaInP cladding layer7, a p-type GaInP etching stopper layer8, a second p-type AlGaInP cladding layer9, a C-doped AlGaAs layer (Zn-diffusion suppressing layer)10, a p-type GaInP intermediate layer11, and a p-type GaAs cap layer12are sequentially grown on a n-type GaAs substrate1.

REFERENCES:
patent: 5278857 (1994-01-01), Yuge et al.
patent: 5488233 (1996-01-01), Ishikawa et al.
patent: 6181723 (2001-01-01), Okubo et al.
patent: 6229834 (2001-05-01), Nisitani et al.
patent: 6265732 (2001-07-01), Nakatsu et al.
patent: 6351480 (2002-02-01), Akagi
patent: 6377598 (2002-04-01), Watanabe et al.
patent: 6528823 (2003-03-01), Akaike et al.
patent: 7436870 (2008-10-01), Ono et al.
patent: 7449720 (2008-11-01), Suzuki et al.
patent: 2002/0036296 (2002-03-01), Akaike et al.
patent: 2003/0206566 (2003-11-01), Ohitsu et al.
patent: 2007/0045651 (2007-03-01), Suzuki
patent: 2007/0086498 (2007-04-01), Ono et al.
patent: 2009/0140273 (2009-06-01), Takeuchi et al.
patent: 1347160 (2002-05-01), None
patent: 9-69667 (1997-03-01), None
patent: 11-186665 (1999-07-01), None
patent: 2002-261321 (2002-09-01), None
Machine Translation of Japanese Publication No. 09-069667; Mar. 11, 1997.

Affiliated with

Also associated with

Rating

Epitaxial wafer for a semiconductor light emitting device,... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Epitaxial wafer for a semiconductor light emitting device,..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Epitaxial wafer for a semiconductor light emitting device,... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4057306