Epitaxial wafer for a light-emitting diode and a light-emitting

Details Epitaxial wafer for a light-emitting diode and a light-emitting Epitaxial wafer for a light-emitting diode and a light-emitting

1998-02-25

1999-11-16

Chaudhuri, Olik

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

257 13, 257 86, 257101, 438 47, 117 13, 117 19, 117 17, 117 21, H01L 3300

Patent

active

059862882

ABSTRACT:
An epitaxial wafer for a light-emitting diode includes an n-type GaP single-crystal substrate, and at least an n-type semiconductor epitaxial layer and a p-type semiconductor epitaxial layer formed on the substrate. The substrate has a boron concentration of not more than 1.times.10.sup.17 cm.sup.-3. A light-emitting diode is fabricated using the epitaxial wafer thus formed provided with electrodes.

REFERENCES:
patent: 4303464 (1981-12-01), Suzuki et al.
patent: 4378259 (1983-03-01), Hasegawa et al.
patent: 5442201 (1995-08-01), Adomi et al.
patent: 5707891 (1998-01-01), Izumi et al.

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