Epitaxial wafer and process for producing the same

Details Epitaxial wafer and process for producing the same Epitaxial wafer and process for producing the same

1993-06-01

1995-08-29

Ahmad, Nasser

Stock material or miscellaneous articles

Composite

Of inorganic material

148 334, 428699, 428700, 428704, H01L 2120, H01L 3300

Patent

active

054458978

ABSTRACT:
In order to grow a GaAs.sub.1-x P.sub.x fixed-composition layer of excellent quality, which has a predetermined composition x, over a GaAs or GaP single crystal substrate, a varied-composition layer is formed between the substrate and the fixed-composition layer. The varied-composition layer comprises at least two varied-composition layer portions and at least one fixed-composition layer portion with a predetermined thickness that is formed between the varied-composition layer portions, whereby dislocations caused by lattice mismatch with the GaP substrate are settled in the varied-composition layer portions and recovered in the fixed-composition layer portion between the varied-composition layer portions, thereby minimizing the dislocations, and thus making it possible to obtain a GaAs.sub.1-x P.sub.x layer of excellent crystal quality, which has a predetermined composition x.

REFERENCES:
patent: 4007074 (1977-02-01), Ogirima et al.
patent: 4088515 (1978-05-01), Blakeslee et al.
patent: 4252576 (1981-02-01), Hasegawa et al.
patent: 4865655 (1989-09-01), Fujita et al.
patent: 5057442 (1991-10-01), Habuka

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