Epitaxial wafer and method of producing the same

Details Epitaxial wafer and method of producing the same Epitaxial wafer and method of producing the same

2008-12-12

2011-10-04

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Gettering of substrate

By layers which are coated, contacted, or diffused

C438S473000, C438S761000, C257SE21054, C257SE21318, C257SE21461

Reexamination Certificate

active

08030184

ABSTRACT:
An epitaxial wafer comprises a silicon substrate, a gettering epitaxial film formed thereon and containing silicon and carbon, and a main silicon epitaxial film formed on the gettering epitaxial film, in which the gettering epitaxial film has a given carbon atom concentration and carbon atoms are existent between its silicon lattices.

REFERENCES:
patent: 3512056 (1970-05-01), Chu Ting Li et al.
patent: 3648123 (1972-03-01), Ernick et al.
patent: 2006/0175613 (2006-08-01), Lee et al.
patent: 2007/0020893 (2007-01-01), Ueno et al.
patent: 102006005875 (2006-08-01), None
patent: 2000-216168 (2000-04-01), None
German Office Actions corresponding to Application No. 10 2008 062 040.8-43, dated Mar. 14, 2011, English language translation.

Affiliated with

Also associated with

Rating

Epitaxial wafer and method of producing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Epitaxial wafer and method of producing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Epitaxial wafer and method of producing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4294843