Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Patent
1997-12-15
1999-10-12
Dutton, Brian
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
257102, 372 46, H01L 3300, H01S 319
Patent
active
059659084
ABSTRACT:
An epitaxial semiconductor crystal plate or wafer capable of attaining increased reliability with enhanced luminance, a manufacturing method thereof as well as a light-emitting diode (LED). It has been found that epitaxial wafers with enhanced illuminance and increased yield of manufacture can be fabricated by specifically arranging a double-heterostructure epitaxial wafer such that the interface between its p-type clad layer 2 and p-type GaAlAs active layer 3 and that between an n-type GaAlAs clad layer 4 and p-type GaAlAs active layer 3 measure 1.times.10.sup.17 cm.sup.-3 or less in oxygen concentration. Also, in order to cause the oxygen concentration near the p-type GaAlAs active layer 3 in layers of the epitaxial wafer to be less than or equal to 1.times.10.sup.17 cm.sup.-3, it may be preferable that a nondoped GaAs polycrystal for use as a preselected original material in liquid-phase epitaxial growth be less than or equal to 1.times.10.sup.16 cm.sup.-3 or thereabout.
REFERENCES:
patent: 5661741 (1997-08-01), Kakimoto
patent: 5789773 (1998-08-01), Takeoka et al.
Mizuniwa Seiji
Shibata Yukiya
Toyoshima Toshiya
Dutton Brian
Hitach Cabel, Ltd.
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