Epitaxial wafer and its fabrication method

Details Epitaxial wafer and its fabrication method Epitaxial wafer and its fabrication method

1996-06-03

1999-01-05

Geist, Gary

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

438 45, 438505, 438506, 438508, 438569, 257101, H01L 2120

Patent

active

058562087

ABSTRACT:
The present invention relates to an epitaxial wafer including a PN junction, which is improved in terms of light output and can have a good-enough ohmic electrode formed thereon. Epitaxial layers are formed of GaAs.sub.1-x P.sub.x where 0.45 <.times..ltoreq.1). A first P-type layer is formed by a vapor-phase growth process, and a second P-type layer is formed on the first P-type layer by a thermal diffusion process, said second P-type layer having a carrier concentration higher than that of said first P-type layer.

REFERENCES:
patent: 3416047 (1968-12-01), Beale
patent: 3654497 (1972-04-01), Dyment
patent: 3964940 (1976-06-01), Hart
patent: 4252576 (1981-02-01), Hasegawa
patent: 5057442 (1991-10-01), Habuka
patent: 5433170 (1995-07-01), Toda

Affiliated with

Also associated with

Rating

Epitaxial wafer and its fabrication method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Epitaxial wafer and its fabrication method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Epitaxial wafer and its fabrication method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-861757