Epitaxial wafer and compound semiconductor light emitting device

Details Epitaxial wafer and compound semiconductor light emitting device Epitaxial wafer and compound semiconductor light emitting device

1996-04-23

1999-01-26

Healy, Brian

Coherent light generators

Particular active media

Semiconductor

372 43, 372 50, 437 51, 437129, H01S 319, H01L 2120

Patent

active

058645730

ABSTRACT:
A compound semiconductor light emitting device having a long life and high performance and a method for industrially fabricating the same are provided. The compound semiconductor light emitting device includes a GaP substrate, a buffer layer consisting of InN which is formed on the substrate, a relaxation layer consisting of In.sub.x Ga.sub.1-x N which is formed on the buffer layer, and a luminescent layer consisting of In.sub.k Ga.sub.1-k N which is formed on the relaxation layer. In this description, k represents a constant value within the range of 0<k<1, and x (excluding 1 and k) decreases from 1 to k through the relaxation layer in the direction of thickness from the side adjacent the buffer layer toward the side adjacent the luminescent layer. In fabrication of the compound semiconductor light emitting device having the aforementioned structure, a buffer layer and an epitaxial layer are formed by the same organic metal chloride vapor phase epitaxy process.

REFERENCES:
patent: 5237182 (1993-08-01), Kitagawa et al.
patent: 5679965 (1997-10-01), Schetzina
patent: 5714006 (1998-02-01), Kizuki et al.
patent: 5727008 (1998-03-01), Koga
Nikkei Science, Oct., 1994, pp. 44 to 55.

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