Epitaxial wafer and a method for producing it

Details Epitaxial wafer and a method for producing it Epitaxial wafer and a method for producing it

2006-07-04

2006-07-04

Flynn, Nathan J. (Department: 2826)

Semiconductor device manufacturing: process

Gettering of substrate

C257S617000, C257SE21321

Reexamination Certificate

active

07071079

ABSTRACT:
The present invention provides an epitaxial wafer wherein a silicon epitaxial layer is formed on a surface of a silicon single crystal wafer in which nitrogen is doped, and a density of oxide precipitates having such a size that a gettering capability can be achieved in a bulk is 108numbers/cm3or more. And the present invention also provides a method for producing an epitaxial wafer wherein a silicon single crystal in which nitrogen is doped is pulled by Czochralski method, the silicon single crystal is processed into a wafer to produce a silicon single crystal wafer, and the silicon single crystal wafer is subjected to heat treatment so that a density of oxide precipitates having such a size that a gettering capability can be achieved in a bulk of the wafer may be 108numbers/cm3or more, and then the silicon single crystal wafer is subjected to epitaxial growth. A silicon single crystal wafer which surely has a high gettering capability irrespective of a device process can be obtained herewith.

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E. Dornberger et al.; “Silicon crystals for future requirements of 300 mm wafers”; Journal of Crystal Growth 22912; 2001; pp. 11-16.

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