Epitaxial wafer

Details Epitaxial wafer Epitaxial wafer

1988-11-14

1990-08-07

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437128, 437130, 437133, 357 17, H01L 3300

Patent

active

049468014

ABSTRACT:
In an epitaxial wafer comprising of a single crystalline substrate, a p type gallium aluminum arsenide mixed crystalline layer and n type gallium aluminum arsenide mixed crystalline layer having an indirect transition type band structure. The p type gallium aluminum arsenide mixed crystalline layer consists of a gallium aluminum arsenide mixed crystalline layer having a direct transition type band structure, positioned about 3 to 10 .mu.m from the pn junction and a gallium aluminum arsenide mixed crystalline layer having an indirect transition type band structure. The aluminum arsenide mixed crystal ratio in the gallium aluminum arsenide is exponentially and gradually changed in the region between the direct transition type layer and the indirect transition type layer.

REFERENCES:
patent: 3965347 (1976-06-01), Heywang
patent: 4296425 (1981-10-01), Nishizawa
patent: 4354140 (1982-10-01), Nishizawa
patent: 4354199 (1982-10-01), Hasegawa et al.
patent: 4414558 (1983-11-01), Nishizawa et al.
patent: 4507157 (1985-03-01), Oliver, Jr.

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