Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – With pn junction isolation
Patent
1993-06-29
1994-04-05
Ngo, Ngan
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
With pn junction isolation
257503, 257545, 257547, 257552, 257553, 257565, 3072762, 3072966, 3073031, H01L 2702, H01L 2704
Patent
active
053008057
ABSTRACT:
A bias structure for an integrated circuit including first and second transistors having emitter terminals coupled respectively to the supply and to a terminal of a resistor whose potential, under certain operating conditions of the circuit, exceeds the supply voltage; base terminals connected to each other and to a current source; and collector terminals connected electrically (12) to an epitaxial tub housing the resistor. A resistor is preferably provided between the two collectors, so that, when the potential of the terminal of the resistor exceeds the supply voltage, the second transistor saturates and maintains the epitaxial tub of the resistor at a potential close to that of the resistor terminal, thus preventing the parasitic diode formed between the resistor and the epitaxial tub from being switched on.
REFERENCES:
patent: 3829709 (1974-08-01), Maigret et al.
patent: 4578695 (1986-03-01), Delaporte et al.
patent: 4897757 (1990-01-01), Tailliet et al.
patent: 5051612 (1991-09-01), Agiman
Demicheli Marco
Gola Alberto
Ngo Ngan
SGS--Thomson Microelectronics S.r.l.
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