Epitaxial surge protection device

Details Epitaxial surge protection device Epitaxial surge protection device

2007-08-28

2009-12-29

Ho, Tu-Tu V (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Device protection

C257S579000, C257S583000, C257SE29222, C438S338000

Reexamination Certificate

active

07638816

ABSTRACT:
A surge protection device with small-area buried regions (38, 60) to minimize the device capacitance. The doped regions (38, 60) are formed either in a semiconductor substrate (34), or in an epitaxial layer (82), and then an epitaxial layer (40, 84) is formed thereover to bury the doped regions (38, 60). The small features of the buried regions (38, 60) are maintained as such by minimizing high temperature and long duration processing of the chip. An emitter (42, 86) is formed in the epitaxial layer (40, 84).

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