Epitaxial superconducting scructure on lattice matched lanthanum

Details Epitaxial superconducting scructure on lattice matched lanthanum Epitaxial superconducting scructure on lattice matched lanthanum

1988-03-04

1990-10-09

Roy, Upendra

Superconductor technology: apparatus, material, process

High temperature , per se

Having tc greater than or equal to 150 k

156610, 252521, 420901, 505729, C30B 710, C30B 2922

Patent

active

049620878

ABSTRACT:
A thin film superconducting device is described in which the substrate is a single or mixed single crystal of lanthanum orthogallate grown from a pure melt of lanthanum, gallium and additive oxides. A portion of the gallium single crystal can be replaced by Sc, Al or In and/or a portion of the lanthanum can be replaced by a rare earth element of smaller ionic radius than lanthanum to allow for manipulation of the lattice constant.

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