Epitaxial substrate, semiconductor element, manufacturing...

Details Epitaxial substrate, semiconductor element, manufacturing... Epitaxial substrate, semiconductor element, manufacturing...

2006-05-04

2009-08-18

Monbleau, Davienne (Department: 2893)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

C257S592000, C257SE33005, C257SE21090, C257SE21092

Reexamination Certificate

active

07575942

ABSTRACT:
An epitaxial substrate used to generate a group III nitride crystal having excellent crystal quality. An upper layer of a group III nitride is formed on a sapphire base with an off angle, and after that a heating process is performed at a temperature not lower than 1500° C., and thereby, the crystal quality of the upper layer is improved and repeating steps of which the size is greater than the height of several atomic layers are provided on the surface of the upper layer. The obtained epitaxial substrate is used as a base substrate for growing a group III nitride crystal layer. The group III nitride crystal grows in a manner of step flow, and therefore, threading dislocations from the upper layer are bent according to this growth, and are unevenly distributed as the crystal grows afterwards.

REFERENCES:
patent: 6586819 (2003-07-01), Matsuoka
patent: 6924159 (2005-08-01), Usui et al.
patent: 7189588 (2007-03-01), Usui et al.
patent: 3427047 (2003-05-01), None
Akira Sakai and Akira Usui, “Reduction of dislocation density in GaN films by epitaxial lateral overgrowth,”, “Oyo Buturi,” The Japan Society of Applied Physics, vol. 68, No. 7, pp. 774-779 (1999) and English Language Abstract.

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