Epitaxial structure with increased piezoelectric effect and a su

Details Epitaxial structure with increased piezoelectric effect and a su Epitaxial structure with increased piezoelectric effect and a su

1983-12-19

1985-09-03

Budd, Mark O.

Electrical generator or motor structure

Non-dynamoelectric

Piezoelectric elements and devices

310328, 310334, 310311, 333147, 333187, 333193, H01L 4108

Patent

active

045395012

ABSTRACT:
An epitaxial structure in which a constraint imposed by forced epitaxy causes an increase in the piezoelectric effect of a group of layers. The structure which provides this effect utilizes a semi-insulating substrate made from a first material on which is deposited by forced epitaxy a layer of a second material, the two materials are in crystalline mesh parameter disharmony, which creates in said layer a constraint increasing its piezoelectricity. On the constrained layer are deposited two groups of alternated "deforming" and "deformed" layers of the two materials. The thickness of the structure is sufficient to allow propagation of the surface waves. The advantage of this structure is that it allows two transducers such as transistors to be integrated on or at the side of this structure.

REFERENCES:
patent: 3351786 (1967-11-01), Muller et al.
patent: 3726585 (1973-04-01), Fedotowsky et al.
patent: 4456850 (1984-06-01), Inoue et al.
patent: 4469977 (1984-09-01), Quinn et al.
IBM Technical Disclosure Bulletin, vol. 15, No. 3, (Aug. 72), V. L. Rideout, "Fabrication of Multilayer Thin-Film Piezoelectric Transducers," pp. 928-929.
Electronics Letters, vol. 17, No. 12, (Jun. 81), J. Henaff et al., "New SSBW Mode in GaAs," pp. 427-428.
Japanese Journal Applied Physics, Supplement 16-1, vol. 1, (1977), K. W. Yeh et al., "Detection of Acoustic Waves with a PI-DMOS Transducer," pp. 517-521.

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