Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Reexamination Certificate
2005-10-25
2005-10-25
Kunemund, Robert (Department: 1765)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
C117S089000, C117S935000, C428S450000, C428S310500
Reexamination Certificate
active
06958092
ABSTRACT:
A wafer is characterized in that the wafer has a non-uniform distribution of crystal lattice vacancies, wherein the concentration of crystal lattice vacancies in the bulk layer are greater than the concentration of crystal lattice vacancies in the front surface layer. In addition, the front surface of the wafer has an epitaxial layer, having a thickness of less than about 2.0 çm, deposited thereon. A process comprises heating a surface of a wafer starting material to remove a silicon oxide layer from the surface and depositing an epitaxial layer onto the surface to form an epitaxial wafer. The epitaxial wafer is then heated to a soak temperature of at least about 1175C. while exposing the epitaxial layer to an oxidizing atmosphere comprising an oxidant, and the wafer is cooled at a rate of at least about 10C./sec.
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Rossi Jon A.
Wilson Gregory M.
Yang Charles C.
Kunemund Robert
MEMC Electronic Materials , Inc.
Senniger Powers
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