Epitaxial silicon starting material

Details Epitaxial silicon starting material Epitaxial silicon starting material

1995-02-14

1996-10-01

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

With pn junction isolation

257550, 257913, H01L 2900, H01L 2358

Patent

active

055613160

ABSTRACT:
A silicon starting material for fabricating integrated circuits is desrcibed that comprises a silicon wafer substrate material and a first epitaxial layer grown on the wafer substrate material which eliminates stacking faults in the subsequent fabrication of a semiconductor device.

REFERENCES:
patent: 3961340 (1976-06-01), Encinas

Affiliated with

Also associated with

Rating

Epitaxial silicon starting material does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Epitaxial silicon starting material, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Epitaxial silicon starting material will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1503669