Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Reexamination Certificate
2011-03-15
2011-03-15
Nhu, David (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
C257S347000, C257S315000, C257S351000, C257SE21170, C257SE21229, C257SE21278, C257SE21304, C257SE21320, C257SE21545, C257SE21562, C257SE21646
Reexamination Certificate
active
07906830
ABSTRACT:
Memory cell structures, including PSOIs, NANDs, NORs, FinFETs, etc., and methods of fabrication have been described that include a method of epitaxial silicon growth. The method includes providing a silicon layer on a substrate. A dielectric layer is provided on the silicon layer. A trench is formed in the dielectric layer to expose the silicon layer, the trench having trench walls in the <100> direction. The method includes epitaxially growing silicon between trench walls formed in the dielectric layer.
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Li Du
Wells David H.
Brooks Cameron & Huebsch PLLC
Micro)n Technology, Inc.
Nhu David
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