Epitaxial semiconductor layer and method

Details Epitaxial semiconductor layer and method Epitaxial semiconductor layer and method

2006-07-06

2009-02-10

Thai, Luan (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

With specified dopant

For compound semiconductor

C257S607000, C257SE21043, C257SE21057, C257SE21343, C257SE21567

Reexamination Certificate

active

07489019

ABSTRACT:
A method for epitaxially forming a first semiconductor structure attached to a second semiconductor structure is provided. Devices and methods described include advantages such as reduced lattice mismatch at an epitaxial interface between two different semiconductor materials. One advantageous application of such an interface includes an electrical-optical communication structure. Methods such as deposition of layers at an elevated temperature provide easy formation of semiconductor structures with a modified lattice constant that permits an improved epitaxial interface.

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