Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates
Reexamination Certificate
2007-01-09
2008-08-26
Thai, Luan (Department: 2891)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
C438S514000, C438S919000
Reexamination Certificate
active
07416958
ABSTRACT:
A method for epitaxially forming a first semiconductor structure attached to a second semiconductor structure is provided. Devices and methods described include advantages such as reduced lattice mismatch at an epitaxial interface between two different semiconductor materials. One advantageous application of such an interface includes an electrical-optical communication structure. Methods such as deposition of layers at an elevated temperature provide easy formation of semiconductor structures with a modified lattice constant that permits an improved epitaxial interface.
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Micro)n Technology, Inc.
Schwegman Lundberg & Woessner, P.A.
Thai Luan
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