Epitaxial regrowth in a distributed feedback laser

Details Epitaxial regrowth in a distributed feedback laser Epitaxial regrowth in a distributed feedback laser

2007-05-15

2011-10-11

Mulpuri, Savitri (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Mesa formation

C438S505000, C438S760000

Reexamination Certificate

active

08034648

ABSTRACT:
Optimizing the regrowth over epitaxial layers during manufacture of a distributed feedback laser. In one example embodiment, a method for depositing an InP regrowth layer on an epitaxial base portion of a distributed feedback laser includes growing a first portion of the regrowth layer at an initial substrate temperature of approximately 580 degrees Celsius to a thickness between approximately 300 Angstroms and approximately 900 Angstroms, increasing the substrate temperature from the initial substrate temperature to an increased substrate temperature of approximately 660 degrees Celsius, growing a second portion of the regrowth layer at the increased substrate temperature, doping a first part of an uppermost layer of the regrowth layer at a concentration of approximately 8.00*10^17/cm3 at the increased substrate temperature, and doping a second part of the uppermost layer of the regrowth layer at a concentration between approximately 1.90*10^18/cm3 and approximately 2.00*10^18/cm3 at the increased substrate temperature.

REFERENCES:
patent: 4092659 (1978-05-01), Ettenberg
patent: 4740987 (1988-04-01), McCall et al.
patent: 4859628 (1989-08-01), Knight et al.
patent: 4951292 (1990-08-01), Kuindersma et al.
patent: 5208821 (1993-05-01), Berger et al.
patent: 5450432 (1995-09-01), Okuda
patent: 5585309 (1996-12-01), Mori et al.
patent: 5675601 (1997-10-01), Karakida et al.
patent: 5793787 (1998-08-01), Meyer et al.
patent: 5926493 (1999-07-01), O'Brien et al.
patent: 6111275 (2000-08-01), Hata
patent: 6219366 (2001-04-01), Furushima
patent: 6477283 (2002-11-01), Shimizu et al.
patent: 6618410 (2003-09-01), Fischer et al.
patent: 2002/0037024 (2002-03-01), Huang
patent: 2002/0114367 (2002-08-01), Stintz et al.
patent: 2002/0117675 (2002-08-01), Mascarenhas
patent: 2003/0002557 (2003-01-01), Eng et al.
patent: 2003/0179795 (2003-09-01), Moriya et al.
patent: 2004/0057483 (2004-03-01), Takemi et al.
patent: 2004/0079967 (2004-04-01), Shakuda et al.
patent: 2004/0086017 (2004-05-01), Yoshida et al.
patent: 2004/0190835 (2004-09-01), Burdick et al.
patent: 2005/0031000 (2005-02-01), Botez
patent: 2000-340894 (2000-12-01), None
Sexl, M., Böhm G., Maier, M., Tränke, G., Weimann, G., & Abstreiter, G. (1997). MBE growth of metamorphic In(Ga)AIAs buffers. 1997 IEEE International Symposium on Compound Semiconductors, IEEE, 49-52.
Sexl, M., Böhm G., Maier, M., Tränke, G., Weimann, G., & Abstreiter, G. (1997). MBE growth of metamorphic In(Ga)AIAs buffers. 1997 IEEE International Symposium on Compound Semiconductors, IEEE, 49-52.
Sudo, Tsurugi, et al., Semiconductor Laser Having Low Stress Passivation Layer, U.S. Appl. No. 11/749,047, filed May 15, 2007.
Young, David Bruce, et al., Semiconductor Laser Having a Doped Active Layer, U.S. Appl. No. 11/749,013, filed May 15, 2007.
Verma, Ashish K., et al., Thin INP Spacer Layer in a High Speed Laser for Reduced Lateral Current Spreading, U.S. Appl. No. 11/749,033, filed May 15, 2007.
Dimitrov, Roman, et al., Method for Applying Protective Laser Facet Coatings, U.S. Appl. No. 11/749,052, filed May 15, 2007.
Dimitrov, Roman, et al., High Resistivity Engineered Laser Facet Coatings, U.S. Appl. No. 11/749,057, filed May 15, 2007.
Dimitrov, Roman et al., Laser Facet Pre-Coating Etch for Controlling Leakage Current, U.S. Appl. No. 11/749,061, filed May 15, 2007.
U.S. Appl. No. 11/749,013, Mail Date Oct. 29, 2008, Office Action.
U.S. Appl. No. 11/749,013, Mail Date Feb. 25, 2009, Notice of Allowance.
U.S. Appl. No. 11/749,047, Mail Date Aug. 12, 2008, Office Action.
U.S. Appl. No. 11/749,047, Mail Date Feb. 6, 2009, Notice of Allowance.
U.S. Appl. No. 11/749,033, Mail Date Jun. 2, 2008, Office Action.
U.S. Appl. No. 11/749,033, Mail Date Jan. 13, 2009, Notice of Allowance.
U.S. Appl. No. 11/749,057, Mail Date Dec. 11, 2008, Office Action.

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