Epitaxial reactor having a wall which is protected from deposits

Details Epitaxial reactor having a wall which is protected from deposits Epitaxial reactor having a wall which is protected from deposits

1989-03-21

1991-07-02

Bueker, Richard

Coating apparatus

Gas or vapor deposition

With treating means

118715, 118725, 118730, C23C 1600

Patent

active

050277464

ABSTRACT:
An epitaxial growth reactor for processing wafers (1) of a semiconductor material by exposing it to a reactive gas flow. A wall (8) positioned at a slight distance from the wafer or group of wafers which is exposed to the reactive gas in a double wall, with a very narrow space (34) between the two walls, and this space is filled with a mixture whose composition can be varied and, consequently, the thermal conductivity can be adjusted.
The mixture used is a hydrogen/argon mixture, the proportion of each of these gasses in the mixture being adjustable.
The interior wall (8) of the double wall is a quartz plate and the exterior wall (9) is made of metal. Relevant FIG.: 1.

REFERENCES:
patent: 4579080 (1986-04-01), Martin
patent: 4596208 (1986-06-01), Wolfson
patent: 4641603 (1987-02-01), Miyazaki
patent: 4682566 (1987-07-01), Aitken

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