Epitaxial process for silicon on insulator structure

Details Epitaxial process for silicon on insulator structure Epitaxial process for silicon on insulator structure

1988-08-24

1990-02-20

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

148DIG71, 148DIG152, 148DIG154, 156603, 437 26, 437 62, 437106, 437108, 437247, 437939, 437973, 437 82, H01L 2120, H01L 21324

Patent

active

049026429

ABSTRACT:
The present invention provides products and methods of forming an epitaxial silicon layer on an implanted buried insulator silicon on insulator structure (10). A silicon film (16) is pre-treated to remove residual oxide and surface damage layers, but in such a way as to not damage the silicon film (16) or insulating layer (14) below the silicon film (16). A layer of amorphous silicon (18) is formed on the silicon film (16) in processes to avoid formation of polycrystalline silicon, and also to avoid damage to the silicon film (16). The layer of amorphous silicon (18) is annealed to form an epitaxial layer of single crystalline silicon (20).

REFERENCES:
patent: 4046618 (1977-09-01), Chaudhari et al.
patent: 4357179 (1982-11-01), Adams et al.
patent: 4371421 (1983-02-01), Fan et al.
patent: 4448632 (1984-05-01), Alasaka
patent: 4487635 (1984-12-01), Kugimiya et al.
patent: 4498226 (1985-02-01), Inoue et al.
patent: 4498951 (1985-02-01), Tamura et al.
patent: 4565584 (1986-01-01), Tamura et al.
patent: 4565599 (1986-01-01), Geis et al.
patent: 4579609 (1986-04-01), Reif et al.
patent: 4584025 (1986-04-01), Takaoka et al.
patent: 4596604 (1986-06-01), Akiyama et al.
patent: 4604159 (1986-08-01), Kobayashi et al.
patent: 4692994 (1987-09-01), Moniwa et al.
Ota, Thin Solid Films, vol. 106, 1983, pp. 111 and 112.
Kamins et al., "Structure and Stability of Low Pressure Chemically Vapor-Deposited Silicon Films", J. Electrochem Soc., vol. 125, No. 6, Jun. 1978, pp. 927-932.
Sze, "VLSI Technology", McGraw-Hill Book Co., New York, N.Y., 1983, pp. 99-103.

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