Epitaxial oxide cap layers for enhancing GMR performance

Dynamic magnetic information storage or retrieval – Head – Magnetoresistive reproducing head

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C428S811200, C428S811500, C428S814000, C428S815000, C428S816000

Reexamination Certificate

active

07446985

ABSTRACT:
A magnetic head and magnetic storage system containing such a head, the head including a free layer and a layer of metal oxide substantially epitaxially formed relative to the free layer. Preferably, the layer of metal oxide is a crystalline structure, and is of ZnO.

REFERENCES:
patent: 4825325 (1989-04-01), Howard
patent: 5064477 (1991-11-01), Delahoy
patent: 5462795 (1995-10-01), Shinjo et al.
patent: 5756207 (1998-05-01), Clough et al.
patent: 6490139 (2002-12-01), Hayashi et al.
patent: 6495275 (2002-12-01), Kamiguchi et al.
patent: 6517896 (2003-02-01), Horng et al.
patent: 6608740 (2003-08-01), Tanaka et al.
patent: 7190557 (2007-03-01), Li et al.
patent: 2001/0005300 (2001-06-01), Hayashi
patent: 2001/0006444 (2001-07-01), Hayakawa et al.
patent: 2002/0048127 (2002-04-01), Fukuzawa et al.
patent: 2003/0030944 (2003-02-01), Lin et al.
patent: 2003/0035256 (2003-02-01), Hayashi et al.
patent: 2003/0151859 (2003-08-01), Hayashi et al.
patent: 19652536 (1997-06-01), None
patent: 05-143934 (1993-06-01), None
patent: 10313138 (1998-11-01), None
patent: 2001222804 (2001-08-01), None
patent: 2003101100 (2003-04-01), None
JPO Abstract Translation of JP 05-143934 A (Pat-No. JP405143934A).
Machine Translation of JP 2001-222804 A.
Full English Translation of JP 05-143934 A (PTO 07-4552).
Full English Translation of JP 2001-222804 A (PTO 07-2984).
Lin, Tsann et al., “Effects of Oxide Seed and Cap Layers on Magnetic Properties of a Synthetic Spin Valve”, Applied Physics Letters, vol. 78, No. 15, Apr. 9, 2001.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Epitaxial oxide cap layers for enhancing GMR performance does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Epitaxial oxide cap layers for enhancing GMR performance, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Epitaxial oxide cap layers for enhancing GMR performance will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4034675

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.