Epitaxial overgrowth method

Details Epitaxial overgrowth method Epitaxial overgrowth method

1993-11-29

1996-09-10

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437 90, 437132, 437133, 437911, H01L 2120

Patent

active

055545610

ABSTRACT:
A vertical field effect transistor (100) and fabrication method with buried gates (104) having spaced apart gate fingers and connecting structure and overgrown with source and channel epilayer followed by a doping connection of the gate fingers and connecting structure.

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patent: 4712122 (1987-12-01), Nishizawa et al.
patent: 5168070 (1992-12-01), Luth
patent: 5231037 (1993-07-01), Yuan et al.
Alferov et al. "Buried-gate gullium arsenide vertical field-effect transistor" Sov. Tech. Phys. Lett. 12(2), Feb. 1986, pp. 77-78.
Asai et al. "Lateral GaAs growth over tungsten grating on (001) GaAs substrats by metalorganic chemical vapor depositer & applications to vertical field effect transistors" J. Appl. Phys. 55(10) May 15, 1984, pp. 3868-3870.

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