Epitaxial overgrowth method

Details Epitaxial overgrowth method Epitaxial overgrowth method

1993-04-30

1998-01-27

Quach, T. N.

Fishing, trapping, and vermin destroying

437 40, 437203, H01L 2120

Patent

active

057121893

ABSTRACT:
A vertical field effect transistor (700) and fabrication method with buried gates (704) having gate sidewall crystal orientation the same as the substrate surface and a low index substrate crystal orientation without tilt to a higher index direction. The gate (704) may have modulated doping along the channel (706), and the drain (708) may have a lighter doping level than the channel which may be accomplished by an epitaxial overgrowth of the gates (704) to form the channels (706).

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