Epitaxial outdiffusion technique for integrated bipolar and fiel

Details Epitaxial outdiffusion technique for integrated bipolar and fiel Epitaxial outdiffusion technique for integrated bipolar and fiel

1975-09-10

1977-06-28

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29571, 29576E, 29577, 148187, 148191, 357 42, 357 44, 357 48, 357 90, H01L 21225, H01L 2120, H01L 2176

Patent

active

040323722

ABSTRACT:
An NPN transistor, a P channel and an N channel field effect transistor are formed in the same epitaxial layer on a monolithic semiconductor substrate. Subcollector-like areas of one conductivity type are diffused into selected regions of a semiconductor substrate of the opposite conductivity type. Each subcollector-like area comprises two impurities of the same conductivity type but different concentrations and diffusion rates. An epitaxial layer of the same conductivity type as the substrate is grown over the substrate. One of each pair of subcollector impurities outdiffuses completely through the epitaxial layer during the growth of the epitaxial layer and during subsequent heat treatments to define a plurality of isolated pockets of a conductivity type opposite the conductivity type of the surrounding epitaxial layer and substrate. An NPN bipolar transistor and a P channel field effect transistor subsequently are formed in respective isolated pockets. An N channel field effect transistor is formed in the epitaxial layer between the isolated pockets.

REFERENCES:
patent: 3244950 (1966-04-01), Ferguson
patent: 3440503 (1969-04-01), Gallagher et al.
patent: 3481801 (1969-12-01), Hugle
patent: 3609479 (1971-09-01), Lin et al.
patent: 3723199 (1973-03-01), Vora
patent: 3748545 (1973-07-01), Beale

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