Superconductor technology: apparatus – material – process – High temperature devices – systems – apparatus – com- ponents,... – Substrate for supporting superconductor
Patent
1994-02-10
1995-04-18
King, Roy V.
Superconductor technology: apparatus, material, process
High temperature devices, systems, apparatus, com- ponents,...
Substrate for supporting superconductor
505452, 505729, 117 54, 428930, 428702, C30B 1902
Patent
active
054079063
ABSTRACT:
A substantially single phase, single crystalline, highly epitaxial film of Bi.sub.2 CaSr.sub.2 Cu.sub.2 O.sub.8 superconductor which has a T.sub.c (zero resistance) of 83K is provided on a lattice-matched substrate with no intergrowth. This film is produced by a Liquid Phase Epitaxy method which includes the steps of forming a dilute supercooled molten solution of a single phase superconducting mixture of oxides of Bi, Ca, Sr, and Cu having an atomic ratio of about 2:1:2:2 in a nonreactive flux such as KCl, introducing the substrate, e.g., NdGaO.sub.3, into the molten solution at 850.degree. C., cooling the solution from 850.degree. C. to 830.degree. C. to grow the film and rapidly cooling the substrate to room temperature to maintain the desired single phase, single crystalline film structure.
REFERENCES:
Belt et al, "Superconducting film growth on LaGaO.sub.3 substrates by liquid phase epitaxy", Appl. Phys. lett. 56(18) Apr. 1991, pp. 1805-1807.
Balestino et al, "Epitaxial Films Of BSCCO growth from liquid KCl solutions onto several substrates", IEEE Transactions On Magnetics, vol. 27, No. 2, Mar. 1991, pp. 1589-1591.
Pandey Raghvendra K.
Raina Kanwal K.
Solayappan Narayanan
King Roy V.
The Texas A&M University System
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