Epitaxial layer structure grown on graded substrate and method o

Details Epitaxial layer structure grown on graded substrate and method o Epitaxial layer structure grown on graded substrate and method o

1985-10-17

1988-01-12

Kittle, John E.

Stock material or miscellaneous articles

Composite

Of inorganic material

357 16, 357 30, B32B 900, H01L 29161

Patent

active

047191554

ABSTRACT:
An intentional lattice mismatch, .DELTA.a/a where .DELTA.a is a difference in the lattice constant of a constant-composition layer and an epitaxial layer and a is the lattice constant of the constant-composition layer, is introduced into the epitaxial layer of a crystal structure having a graded composition layer sandwiched between a single crystal bulk substrate and the constant composition layer so as to alleviate strain resulting from a lattice constant variation in the graded substrate.

REFERENCES:
patent: 4053920 (1977-10-01), Enstrom
patent: 4439399 (1984-03-01), Hawrylo
patent: 4616241 (1986-10-01), Biefeld et al.
Crystals, Growth, Properties, Applications, p. 80, Springer-Verlag, 1978.

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