Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1993-01-29
1999-09-28
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 20, 257 22, 257190, 257200, H01L 2906, H01L 310328, H01L 310336, H01L 31072
Patent
active
059593083
ABSTRACT:
Heteroepitaxy of lattice-mismatched semiconductor materials such as GaAs (110) on silicon (102) is accomplished by formation of a defect annihilating grid (104) on the silicon (102) prior to the epitaxy of the GaAs (110).
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Matyi Richard J.
Shichijo Hisashi
Donaldson Richard L.
Hoel Carlton H.
Ngo Ngan V.
Texas Instruments Incorporated
Valetti Mark A.
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