Epitaxial layer for laser diode ridge protection

Details Epitaxial layer for laser diode ridge protection Epitaxial layer for laser diode ridge protection

2007-09-18

2007-09-18

Nguyen, Michael Dung (Department: 2828)

Coherent light generators

Particular resonant cavity

Mirror support or alignment structure

C372S043010

Reexamination Certificate

active

10670876

ABSTRACT:
A semiconductor laser formed from a semiconductor wafer has an active layer, at last two optical cladding layers, and a ridge waveguide. A ridge top surface of the ridge waveguide is deposited from a first surface of the semiconductor laser wafer by a first height. A plurality of semiconductor mesas are formed on the semiconductor laser wafer and have mesa top surfaces disposed from the first surface by a second height greater than the first height so that the plurality of semiconductor mesas shield the ridge waveguide from mechanical damage.

REFERENCES:
patent: 4835783 (1989-05-01), Suyama et al.
patent: 5399885 (1995-03-01), Thijs et al.
patent: 6888870 (2005-05-01), Makita et al.

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