Epitaxial layer for dissolved wafer micromachining process

Details Epitaxial layer for dissolved wafer micromachining process Epitaxial layer for dissolved wafer micromachining process

1997-03-13

1998-12-29

Niebling, John

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Thinning of semiconductor substrate

438455, 438 50, 438 52, 438 53, 438 57, H01L 2130, H01L 2146

Patent

active

058541225

ABSTRACT:
Micromachining a microelectromechanical structure requires one or more heavily doped silicon layers. Intricately patterned structures are created in a heavily doped surface layer on a relatively undoped substrate. The substrate is subsequently dissolved in a selective etch. The doping prevents the patterned structures from dissolving. In this invention, a doped layer is grown epitaxially onto the first substrate rather than by diffusing a dopant into the substrate. This produces additional planarity, thickness control, and dopant profile control. The structure may then be placed into a larger device, such as an infrared sensor, an accelerometer, or an angular rate sensor.

REFERENCES:
Wolf et al., Silicon Processing for the VLSI Era, vol. 1--Process Technology, 1986, p. 124.

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