Epitaxial layer-bearing wafer of rare earth gallium garnet for M

Details Epitaxial layer-bearing wafer of rare earth gallium garnet for M Epitaxial layer-bearing wafer of rare earth gallium garnet for M

1989-05-18

1990-11-06

Mis, David

Oscillators

Solid state active element oscillator

Significant distributed parameter resonator

333193, 428693, H03B 500, H03H 964, B32B 900

Patent

active

049689541

ABSTRACT:
An improved epitaxial single crystal wafer suitable as a working element of magnetostatic wave devices is proposed which comprises a substrate single crystal wafer of a rare earth gallium garnet, e.g., gadolinium gallium garnet, neodymium gallium garnet and samarium gallium garnet, and an epitaxial layer formed thereon having a chemical composition, different from conventional yttrium iron garnet, Y.sub.3 Fe.sub.5 O.sub.12, of the formula

REFERENCES:
patent: 4624901 (1986-11-01), Glass

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