Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – With pn junction isolation
Patent
1994-05-17
1996-05-07
Jackson, Jr., Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
With pn junction isolation
257546, 257552, 257557, H01L 2900
Patent
active
055149014
ABSTRACT:
In an integrated circuit in which a first PN-junction-isolated island may momentarily become forward biased with respect to the surrounding substrate and inject unwanted charge that is collected by second islands adjacent one side of a first island, the injected charge is drawn away from the second islands and to a gatherer-collector island located at another side of the first island. The first island, gatherer-collector island and intervening substrate therebetween serve respectively as the emitter, collector, and base of a protective transistor. This transistor becomes a highly efficient collector of injected charge when the protective-transistor collector is hard wired to ground and the protective-transistor base is hard-wire connected to the substrate portion between the injecting first island and adjacent second island.
REFERENCES:
patent: 4027325 (1977-05-01), Genesi
patent: 4233618 (1980-11-01), Genesi
patent: 4458158 (1984-07-01), Mayrand
patent: 4466011 (1984-08-01), Van Zanten
patent: 4646124 (1987-02-01), Zunino
patent: 5021860 (1991-06-01), Bertotti et al.
Cooper Richard B.
Peppiette Roger C.
Stoddard Robert J.
Allegro Microsystems Inc.
Guay John
Jackson, Jr. Jerome
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